1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Jia-Liangen_US
dc.contributor.authorChiu, Tang-Jungen_US
dc.contributor.authorJou, Christina F.en_US
dc.date.accessioned2019-04-02T06:04:41Z-
dc.date.available2019-04-02T06:04:41Z-
dc.date.issued2006-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150836-
dc.description.abstractA highly integrated 2.4-GHz Class F power amplifier using TSMC 0.35 mu m 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier.en_US
dc.language.isoen_USen_US
dc.titleA highly Integrated SiGeBiCMOS Class F Power Amplifier for Bluetooth Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERSen_US
dc.citation.spage277en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000239709500072en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


Related Contents
Loading...