A highly Integrated SiGeBiCMOS Class F Power Amplifier for Bluetooth Application

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DC 欄位	值	語言
dc.contributor.author	Chen, Jia-Liang	en_US
dc.contributor.author	Chiu, Tang-Jung	en_US
dc.contributor.author	Jou, Christina F.	en_US
dc.date.accessioned	2019-04-02T06:04:41Z	-
dc.date.available	2019-04-02T06:04:41Z	-
dc.date.issued	2006-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150836	-
dc.description.abstract	A highly integrated 2.4-GHz Class F power amplifier using TSMC 0.35 mu m 3P3M standard SiGe BiCMOS process is presented. This amplifier integrates both the input matching network and output fundamental and third harmonic loading networks onto the chip. Additional fine tuning output circuit is implemented outside the chip for some flexibility. Measurement results show that the power amplifier can exhibit an output power about 20dBm, with power added efficiency (PAE) of 34.2% at 2.4-GHz Bluetooth frequency band. This result demonstrates the potential of full-scale integration of the high efficiency power amplifier.	en_US
dc.language.iso	en_US	en_US
dc.title	A highly Integrated SiGeBiCMOS Class F Power Amplifier for Bluetooth Application	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2006 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION, AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PAPERS	en_US
dc.citation.spage	277	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000239709500072	en_US
dc.citation.woscount	0	en_US
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