Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hsu, Ming-Yang | en_US |
dc.contributor.author | Lin, Gray | en_US |
dc.contributor.author | Pan, Po-Chou | en_US |
dc.contributor.author | Chen, Yu-Chen | en_US |
dc.date.accessioned | 2019-04-02T06:04:19Z | - |
dc.date.available | 2019-04-02T06:04:19Z | - |
dc.date.issued | 2018-01-01 | en_US |
dc.identifier.issn | 2326-5442 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150845 | - |
dc.description.abstract | Fabrication of electrically injected quantum-dot photonic-crystal (PC) surface-emitting lasers (SELs) is simplified by deposition of indium-tin-oxide over "PC slab-on-substrate" structure. Temperature-insensitive threshold current behavior is exhibited for negatively detuned PCSEL where continuous-wave lasing emission at 1308.4 nm is demonstrated for the first time. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Quantum dots | en_US |
dc.subject | photonic crystals | en_US |
dc.subject | surface emitting lasers | en_US |
dc.subject | indium-tin-oxide | en_US |
dc.subject | semiconductor lasers | en_US |
dc.title | Continuous-Wave Lasing of 1.3-mu m Quantum-Dot Photonic-Crystal Surface-Emitting Lasers | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | en_US |
dc.citation.spage | 147 | en_US |
dc.citation.epage | 148 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000450800100072 | en_US |
dc.citation.woscount | 0 | en_US |
Appears in Collections: | Conferences Paper |