Continuous-Wave Lasing of 1.3-mu m Quantum-Dot Photonic-Crystal Surface-Emitting Lasers

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Hsu, Ming-Yang	en_US
dc.contributor.author	Lin, Gray	en_US
dc.contributor.author	Pan, Po-Chou	en_US
dc.contributor.author	Chen, Yu-Chen	en_US
dc.date.accessioned	2019-04-02T06:04:19Z	-
dc.date.available	2019-04-02T06:04:19Z	-
dc.date.issued	2018-01-01	en_US
dc.identifier.issn	2326-5442	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150845	-
dc.description.abstract	Fabrication of electrically injected quantum-dot photonic-crystal (PC) surface-emitting lasers (SELs) is simplified by deposition of indium-tin-oxide over "PC slab-on-substrate" structure. Temperature-insensitive threshold current behavior is exhibited for negatively detuned PCSEL where continuous-wave lasing emission at 1308.4 nm is demonstrated for the first time.	en_US
dc.language.iso	en_US	en_US
dc.subject	Quantum dots	en_US
dc.subject	photonic crystals	en_US
dc.subject	surface emitting lasers	en_US
dc.subject	indium-tin-oxide	en_US
dc.subject	semiconductor lasers	en_US
dc.title	Continuous-Wave Lasing of 1.3-mu m Quantum-Dot Photonic-Crystal Surface-Emitting Lasers	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)	en_US
dc.citation.spage	147	en_US
dc.citation.epage	148	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000450800100072	en_US
dc.citation.woscount	0	en_US
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