完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Tsu-Chi | en_US |
dc.contributor.author | Kuo, Shuo-Yi | en_US |
dc.contributor.author | Hashemi, Ehsan | en_US |
dc.contributor.author | Haglund, Asa | en_US |
dc.contributor.author | Lu, Tien-Chang | en_US |
dc.date.accessioned | 2019-04-02T06:04:23Z | - |
dc.date.available | 2019-04-02T06:04:23Z | - |
dc.date.issued | 2018-01-01 | en_US |
dc.identifier.issn | 2326-5442 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150848 | - |
dc.description.abstract | We report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.99 MW/cm(2) and a lasing wavelength at 369.8 nm. The demonstration of HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | TiO2 | en_US |
dc.subject | high contrast grating (HCG) | en_US |
dc.subject | GaN | en_US |
dc.subject | vertical cavity surface emitting laser (VCSEL) | en_US |
dc.title | Lasing action in GaN-based VCSELs with top high-contrast grating reflectors | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | en_US |
dc.citation.spage | 191 | en_US |
dc.citation.epage | 192 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000450800100093 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |