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dc.contributor.authorChang, Tsu-Chien_US
dc.contributor.authorKuo, Shuo-Yien_US
dc.contributor.authorHashemi, Ehsanen_US
dc.contributor.authorHaglund, Asaen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2019-04-02T06:04:23Z-
dc.date.available2019-04-02T06:04:23Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2326-5442en_US
dc.identifier.urihttp://hdl.handle.net/11536/150848-
dc.description.abstractWe report a GaN-based VCSEL with a high-contrast grating (HCG) as the top mirror. The HCG consisted of TiO2 and rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.99 MW/cm(2) and a lasing wavelength at 369.8 nm. The demonstration of HCG GaN-based VCSEL opens up the possibility to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.en_US
dc.language.isoen_USen_US
dc.subjectTiO2en_US
dc.subjecthigh contrast grating (HCG)en_US
dc.subjectGaNen_US
dc.subjectvertical cavity surface emitting laser (VCSEL)en_US
dc.titleLasing action in GaN-based VCSELs with top high-contrast grating reflectorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC)en_US
dc.citation.spage191en_US
dc.citation.epage192en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000450800100093en_US
dc.citation.woscount0en_US
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