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dc.contributor.authorWang, Sung-Haoen_US
dc.contributor.authorLee, Yueh-Hsuanen_US
dc.contributor.authorQian, Xin-Hongen_US
dc.contributor.authorWu, Chung-Yuen_US
dc.date.accessioned2019-04-02T06:04:27Z-
dc.date.available2019-04-02T06:04:27Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/150865-
dc.description.abstractA 13.56MHz high efficiency CMOS 1X/3X active rectifier with a novel active triple-voltage(3X) rectifier is proposed and verified. The proposed rectifier is specially designed for medical implant systems. It provides 1X/3X dual output voltage (1.99V and 6.29V) allowing the implantable neuromodulation system to operate with high power conversion efficiency (PCE) while stimulating simultaneously. A start-up control circuit is also added to achieve robust start-up mechanism. On-chip delay compensation control is implemented to increase the conduction time, avoid reverse current, and enhance the efficiency. In addition, the rectifier can sustain a higher input inductive voltage without the overstress problem by adding cascode power transistors. The measured dual output voltages of the 1X/3X rectifier are 1.99V and 6.29V while the input inductive voltage is 2.75V. The proposed rectifier achieves 84.2% in PCE with total 57mW output power under 13.56 MHz operation frequency. Based on its capability to provide large output voltage for stimulation with high PCE, the proposed 1X/3X active rectifier is suitable for implantable neuro-modulation systems.en_US
dc.language.isoen_USen_US
dc.titleThe Design of CMOS 13.56-MHz High Efficiency 1X/3X 1.99V/6.29V Active Rectifier for Implantable Neuromodulation Systemsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000451218702009en_US
dc.citation.woscount0en_US
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