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dc.contributor.authorLiu, Kou-Chenen_US
dc.contributor.authorTzeng, Wen-Hsienen_US
dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorHuang, Jiun-Jieen_US
dc.contributor.authorLee, Yun-Juen_US
dc.contributor.authorYeh, Ping-Hungen_US
dc.contributor.authorChen, Pang-Shiuen_US
dc.contributor.authorLee, Heng-Yuanen_US
dc.contributor.authorChen, Fredericken_US
dc.contributor.authorTsai, Ming-Jinnen_US
dc.date.accessioned2014-12-08T15:21:15Z-
dc.date.available2014-12-08T15:21:15Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2011.04.205en_US
dc.identifier.urihttp://hdl.handle.net/11536/15086-
dc.description.abstractThe pulsed laser deposition and growth of a high-k dielectric lanthanum aluminate LaAlO3 (LAO) thin film on indium tin oxide/glass substrate at different oxygen partial pressure was studied. Based on the pulsed laser deposition growth mechanism, we explain how a difference in the oxygen partial pressure influences the surface roughness, formation of an interfacial layer, and the transparent resistive switching characteristics of LAO thin films. The micro-structure and oxygen concentration difference inside LAO thin films may be the main reason for the difference in electrical and resistive switching properties. Films grown at higher oxygen partial pressure displayed more reliable resistive switching performance, due to the formation of the interfacial layer and a lower concentration of oxygen vacancies. The interfacial layer serves as a good oxygen reservoir and the involvement of more oxygen ions ensures the switching reliability. The migration of oxygen ions between the interfacial layer and the LAO film under applied bias may be the switching mechanism. (C) 2011 Elsevier B. V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectLanthanum aluminateen_US
dc.subjectResistive switchingen_US
dc.subjectSwitching memoryen_US
dc.subjectOxygen partial pressureen_US
dc.subjectLaAlO3en_US
dc.subjectPulsed laser depositionen_US
dc.titleInvestigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristicsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.tsf.2011.04.205en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume520en_US
dc.citation.issue4en_US
dc.citation.spage1246en_US
dc.citation.epage1250en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000299231800018-
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