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dc.contributor.authorWu, Chi-Changen_US
dc.contributor.authorLiu, Fu-Kenen_US
dc.contributor.authorLin, Ling-Hungen_US
dc.contributor.authorPang, See-Tongen_US
dc.contributor.authorChuang, Cheng-Kengen_US
dc.contributor.authorPan, Tung-Mingen_US
dc.contributor.authorOu, Keng-Liangen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2014-12-08T15:21:15Z-
dc.date.available2014-12-08T15:21:15Z-
dc.date.issued2011-12-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2011.3952en_US
dc.identifier.urihttp://hdl.handle.net/11536/15087-
dc.description.abstractThe efficiency of DNA immobilization by using various surface cleaning methods is studied in this work. The degree of surface cleaning is evaluated by the surface tension measurement to reveal the contribution from the polar and apolar terms. The observation from the fluorescent microscope images indicates the effectiveness of surface clean by the acetone and ethanol mixtures, as well as the sulphuric acid and hydrogen peroxide mixtures. We also fabricate a series of back-gated, 60-nm nanowired (NW) field-effect transistor (FET) sensors for mutation gene detection by following the developed acetone and ethanol mixtures. Electrical properties of the NWFET sensor demonstrate the n-channel depletion characteristics. The current of the sensor is reduced once the attachment of negative charge molecules. The single-stranded capture DNA is chemically immobilized onto the surface of silicon NWFET by three-step reactions. The sensor surface demonstrates the great performance of current shift after the suitable cleaning. The NWFET sensor is successfully applied to detect the BRAF(V599E) mutation genes from the hybridized processes. The sensing behaviour estimated from the electrical signal reaches the femtomolar level.en_US
dc.language.isoen_USen_US
dc.subjectNanowireen_US
dc.subjectBiosensoren_US
dc.subjectSurface Cleaningen_US
dc.subjectDNAen_US
dc.titleSurface Cleaning of the Nanowire Field-Effect Transistor for Gene Detectionen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1166/jnn.2011.3952en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.issue12en_US
dc.citation.spage10639en_US
dc.citation.epage10643en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000299586100066-
Appears in Collections:Conferences Paper