完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Gong-Ru | en_US |
dc.contributor.author | Lin, Chun-Jung | en_US |
dc.date.accessioned | 2019-04-02T06:04:44Z | - |
dc.date.available | 2019-04-02T06:04:44Z | - |
dc.date.issued | 2006-01-01 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150880 | - |
dc.description.abstract | PECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Fowler-Nordheim tunneling | en_US |
dc.subject | Si-rich oxide | en_US |
dc.subject | metal-SiOx-Si MOSLED | en_US |
dc.subject | Si nanopyramids and nanocrystals | en_US |
dc.title | Enhancement of Fowler-Nordheim tunneling based light emission from metal-SiOx-Si MOSLED | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS | en_US |
dc.citation.spage | 219 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000244096100075 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |