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dc.contributor.authorLin, Gong-Ruen_US
dc.contributor.authorLin, Chun-Jungen_US
dc.date.accessioned2019-04-02T06:04:44Z-
dc.date.available2019-04-02T06:04:44Z-
dc.date.issued2006-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/150880-
dc.description.abstractPECVD grown nanocrystallite Si structure at SiOx/Si interface has been demonstrated to show its capability in enhancing the surface roughness and the Fowler-Nordheim tunneling based carrier injection for improved light emission from a metal-SiOx-Si MOSLED.en_US
dc.language.isoen_USen_US
dc.subjectFowler-Nordheim tunnelingen_US
dc.subjectSi-rich oxideen_US
dc.subjectmetal-SiOx-Si MOSLEDen_US
dc.subjectSi nanopyramids and nanocrystalsen_US
dc.titleEnhancement of Fowler-Nordheim tunneling based light emission from metal-SiOx-Si MOSLEDen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 3RD IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICSen_US
dc.citation.spage219en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000244096100075en_US
dc.citation.woscount0en_US
顯示於類別：會議論文


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