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dc.contributor.authorHuang, Bo-Shihen_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2019-04-02T06:04:44Z-
dc.date.available2019-04-02T06:04:44Z-
dc.date.issued2006-01-01en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/150902-
dc.description.abstractA new matching design of Low-Noise Amplifier (LNA) with ESD protection is proposed and implemented in an ESD-protected LNA, which manipulates the parasitic capacitance of ESD protection device as a core part of LNA. matching network. Without significant degradation on RF performance, 4.5-kV Human-Body-Model (HBM) and 250-V Machine-Model (MM) ESD levels can be achieved. The low RF-performance degradation and high ESD immunity can be simultaneously realized in a simple matching structure without extra circuit components dealing with ESD parasitics in a multi-GHz LNA.en_US
dc.language.isoen_USen_US
dc.titleNew matching methodology of low-noise amplifier with ESD protectionen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11, PROCEEDINGSen_US
dc.citation.spage4891en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000245413505044en_US
dc.citation.woscount1en_US
Appears in Collections:Conferences Paper