Time-Correlated Crosstalk Measurements between CMOS Single-Photon Avalanche Diodes

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DC 欄位	值	語言
dc.contributor.author	Wu, Dai-Rong	en_US
dc.contributor.author	Tsai, Chia-Ming	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2019-04-02T06:04:46Z	-
dc.date.available	2019-04-02T06:04:46Z	-
dc.date.issued	2018-01-01	en_US
dc.identifier.issn	2160-5033	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150925	-
dc.description.abstract	We investigate time-resolved crosstalk probability between single-photon avalanche diodes in CMOS technology. The time-correlated crosstalk measurements reveal an unusual double-peak feature. This behavior becomes more significant at higher excess bias voltages and shorter device-to-device distance and its physical reason will be discussed.	en_US
dc.language.iso	en_US	en_US
dc.subject	Single-photon avalanche diodes	en_US
dc.subject	crosstalk	en_US
dc.subject	time correlation	en_US
dc.subject	CMOS technology	en_US
dc.subject	breakdown flash	en_US
dc.title	Time-Correlated Crosstalk Measurements between CMOS Single-Photon Avalanche Diodes	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2018 INTERNATIONAL CONFERENCE ON OPTICAL MEMS AND NANOPHOTONICS (OMN)	en_US
dc.citation.spage	185	en_US
dc.citation.epage	186	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000454732000090	en_US
dc.citation.woscount	0	en_US
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