Bandgap engineering and spatial confinement of optical phonon in ZnO quantum dots

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DC Field	Value	Language
dc.contributor.author	Hsieh, Wen-Fen	en_US
dc.contributor.author	Lin, Kuo-Feng	en_US
dc.contributor.author	Cheng, Hsin-Ming	en_US
dc.contributor.author	Hsu, Hsu-Cheng	en_US
dc.date.accessioned	2019-04-02T06:04:44Z	-
dc.date.available	2019-04-02T06:04:44Z	-
dc.date.issued	2006-01-01	en_US
dc.identifier.issn	1092-8081	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LEOS.2006.279156	en_US
dc.identifier.uri	http://hdl.handle.net/11536/150969	-
dc.description.abstract	Upon decreasing size of ZnO quantum dots, the blueshift in bandgap reveals the quantum confinement effect and the diminishing ratio of the second- to first-order resonant Raman intensity reveals reducing the electron-phonon Frohlich interaction.	en_US
dc.language.iso	en_US	en_US
dc.title	Bandgap engineering and spatial confinement of optical phonon in ZnO quantum dots	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/LEOS.2006.279156	en_US
dc.identifier.journal	2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2	en_US
dc.citation.spage	939	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000246167900474	en_US
dc.citation.woscount	0	en_US
Appears in Collections:	Conferences Paper