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dc.contributor.authorHsieh, Wen-Fenen_US
dc.contributor.authorLin, Kuo-Fengen_US
dc.contributor.authorCheng, Hsin-Mingen_US
dc.contributor.authorHsu, Hsu-Chengen_US
dc.date.accessioned2019-04-02T06:04:44Z-
dc.date.available2019-04-02T06:04:44Z-
dc.date.issued2006-01-01en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LEOS.2006.279156en_US
dc.identifier.urihttp://hdl.handle.net/11536/150969-
dc.description.abstractUpon decreasing size of ZnO quantum dots, the blueshift in bandgap reveals the quantum confinement effect and the diminishing ratio of the second- to first-order resonant Raman intensity reveals reducing the electron-phonon Frohlich interaction.en_US
dc.language.isoen_USen_US
dc.titleBandgap engineering and spatial confinement of optical phonon in ZnO quantum dotsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/LEOS.2006.279156en_US
dc.identifier.journal2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2en_US
dc.citation.spage939en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000246167900474en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper