Bandgap engineering and spatial confinement of optical phonon in ZnO quantum dots

doi:10.1109/LEOS.2006.279156

標題:	Bandgap engineering and spatial confinement of optical phonon in ZnO quantum dots
作者:	Hsieh, Wen-Fen Lin, Kuo-Feng Cheng, Hsin-Ming Hsu, Hsu-Cheng 光電工程學系 Department of Photonics
公開日期:	1-Jan-2006
摘要:	Upon decreasing size of ZnO quantum dots, the blueshift in bandgap reveals the quantum confinement effect and the diminishing ratio of the second- to first-order resonant Raman intensity reveals reducing the electron-phonon Frohlich interaction.
URI:	http://dx.doi.org/10.1109/LEOS.2006.279156 http://hdl.handle.net/11536/150969
ISSN:	1092-8081
DOI:	10.1109/LEOS.2006.279156
期刊:	2006 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2
起始頁:	939
Appears in Collections:	Conferences Paper