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dc.contributor.authorShu, Chia-Jheen_US
dc.contributor.authorHuang, Yu-Mingen_US
dc.contributor.authorHsu, Shun-Chiehen_US
dc.contributor.authorShu, Jinn-Kongen_US
dc.contributor.authorTsai, Jia-Linen_US
dc.contributor.authorYu, Pei-chenen_US
dc.contributor.authorHung, Yung-Jren_US
dc.contributor.authorLin, Chien-Chungen_US
dc.date.accessioned2019-04-02T06:04:27Z-
dc.date.available2019-04-02T06:04:27Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/150974-
dc.description.abstractA hybrid colloidal quantum dot (CQD) single junction GaAs solar cell was fabricated and measured. The CQDs are cast into the different sizes of trenches on the device surface. The introduction of CQD layer brings wide-range EQE enhancement, particularly in the ultra-violet band. The analysis reveals possible luminescent down-shifting effect due to our embedded quantum dots. As high as 2 times of EQE enhancement can be observed at specific short wavelength.en_US
dc.language.isoen_USen_US
dc.titlePerformance Enhancement of A GaAs Solar Cell with Colloidal Quantum Dots Embedded in Trenchesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)en_US
dc.citation.spage1606en_US
dc.citation.epage1609en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department影像與生醫光電研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Imaging and Biomedical Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000455636001139en_US
dc.citation.woscount0en_US
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