完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Parashar, Parag | en_US |
dc.contributor.author | Jian, Ding-Rung | en_US |
dc.contributor.author | Huang, Weiming | en_US |
dc.contributor.author | Huang, Yi-Wen | en_US |
dc.contributor.author | Lin, Albert | en_US |
dc.date.accessioned | 2019-04-02T06:04:28Z | - |
dc.date.available | 2019-04-02T06:04:28Z | - |
dc.date.issued | 2017-01-01 | en_US |
dc.identifier.issn | 0160-8371 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/150978 | - |
dc.description.abstract | The spectral response of thermophotovoltaic (TPV) absorber is a key factor for TPV system efficiency. We have shown that the planar TPV emitters can be realized by using thin-metal-dielectric stacking (IEEE Photonics J. 8, 1300109, 2016). In this paper, we provide a new structure composed of alternating dielectric and deep-sub-skin-depth (DSSD) metal layers for TPV selective absorbers. The RCWA calculation and the Fourier transform infrared (FTIR) measurement of tantalum (Ta) based planar absorber shows a high absorbance below the cut-off wavelength (lambda<lambda c) and a suppressed absorbance beyond the cut-off wavelength (lambda>lambda c). | en_US |
dc.language.iso | en_US | en_US |
dc.subject | thermophotovoltaics | en_US |
dc.subject | spectral absorption | en_US |
dc.subject | surface roughness | en_US |
dc.subject | photonics | en_US |
dc.title | The Planar Thermophotovoltaic Selective Nearly-Perfect Absorbers/Emitters | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | en_US |
dc.citation.spage | 1631 | en_US |
dc.citation.epage | 1634 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000455636001145 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |