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dc.contributor.authorParashar, Paragen_US
dc.contributor.authorJian, Ding-Rungen_US
dc.contributor.authorHuang, Weimingen_US
dc.contributor.authorHuang, Yi-Wenen_US
dc.contributor.authorLin, Alberten_US
dc.date.accessioned2019-04-02T06:04:28Z-
dc.date.available2019-04-02T06:04:28Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/150978-
dc.description.abstractThe spectral response of thermophotovoltaic (TPV) absorber is a key factor for TPV system efficiency. We have shown that the planar TPV emitters can be realized by using thin-metal-dielectric stacking (IEEE Photonics J. 8, 1300109, 2016). In this paper, we provide a new structure composed of alternating dielectric and deep-sub-skin-depth (DSSD) metal layers for TPV selective absorbers. The RCWA calculation and the Fourier transform infrared (FTIR) measurement of tantalum (Ta) based planar absorber shows a high absorbance below the cut-off wavelength (lambda<lambda c) and a suppressed absorbance beyond the cut-off wavelength (lambda>lambda c).en_US
dc.language.isoen_USen_US
dc.subjectthermophotovoltaicsen_US
dc.subjectspectral absorptionen_US
dc.subjectsurface roughnessen_US
dc.subjectphotonicsen_US
dc.titleThe Planar Thermophotovoltaic Selective Nearly-Perfect Absorbers/Emittersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 IEEE 44TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC)en_US
dc.citation.spage1631en_US
dc.citation.epage1634en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000455636001145en_US
dc.citation.woscount0en_US
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