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dc.contributor.authorWu, Tsung-Chenen_US
dc.contributor.authorChi, Tai-Shihen_US
dc.contributor.authorLee, Chia-Foneen_US
dc.date.accessioned2019-04-02T06:04:19Z-
dc.date.available2019-04-02T06:04:19Z-
dc.date.issued2017-01-01en_US
dc.identifier.issn2308-457Xen_US
dc.identifier.urihttp://dx.doi.org/10.21437/Interspeech.2017-858en_US
dc.identifier.urihttp://hdl.handle.net/11536/150994-
dc.description.abstractVocoder simulations are generally adopted to simulate the electrical hearing induced by the cochlear implant (CI). Our research group is developing a new four-electrode CI microsystem which induces high-frequency electrical hearing while preserving low-frequency acoustic hearing. To simulate the functionality of this CI, a previously developed hearing-impaired (HI) hearing model is combined with a 4-channel vocoder in this paper to respectively mimic the perceived acoustic hearing and electrical hearing. Psychoacoustic experiments are conducted on Mandarin speech recognition for determining parameters of electrodes for this CI. Simulation results show that initial consonants of Mandarin are more difficult to recognize than final vowels of Mandarin via acoustic hearing of HI patients. After electrical hearing being induced through logarithmic frequency distributed electrodes, speech intelligibility of HI patients is boosted for all Mandarin phonemes, especially for initial consonants. Similar results are consistently observed in clean and noisy test conditions.en_US
dc.language.isoen_USen_US
dc.subjectvocoder simulationen_US
dc.subjectMandarin speech recognitionen_US
dc.subjectcochlear implanten_US
dc.subjecthearing impaired modelen_US
dc.titleSimulations of high-frequency vocoder on Mandarin speech recognition for acoustic hearing preserved cochlear implanten_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.21437/Interspeech.2017-858en_US
dc.identifier.journal18TH ANNUAL CONFERENCE OF THE INTERNATIONAL SPEECH COMMUNICATION ASSOCIATION (INTERSPEECH 2017), VOLS 1-6: SITUATED INTERACTIONen_US
dc.citation.spage196en_US
dc.citation.epage200en_US
dc.contributor.department電機工程學系zh_TW
dc.contributor.departmentDepartment of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000457505000040en_US
dc.citation.woscount0en_US
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