Transport Properties of Single Vanadium Oxide Nanowire

Abstract

We measured I-V characteristics and electrical resistance, in the temperature range from room temperature to above 600 K in order to obtain nanodevices. Measurements were taken on a single V(2)O(5) nanowire deposited on a Si template, where two-point and four-point metallic contacts were previously made using e-beam lithography. In both two-and four-point probe measurements, the I-V curves were clearly linear and symmetrical with respect to both axes. Drastic reduction in electrical resistance and deviation from single valued activation energy with increasing temperature indicated phase transitions taking place in the nanowire. From temperature-dependent HR-Micro Raman measurements, reductions from V(2)O(5) to VO(2)/V(2)O(3) phases took place at a temperature as low as 500 K, when electrons were injected to the nanowire through electrical contacts. (C) 2011 Published by Elsevier B. V. Selection and/or peer-review under responsibility of Garry Lee.