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dc.contributor.authorLu, Pengen_US
dc.contributor.authorHo, Yen Tengen_US
dc.contributor.authorChu, Yung-Chingen_US
dc.contributor.authorZhang, Mingen_US
dc.contributor.authorChien, Po-Yenen_US
dc.contributor.authorLuong, Tien-Tungen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorWoo, Jason C. S.en_US
dc.date.accessioned2019-04-02T06:04:28Z-
dc.date.available2019-04-02T06:04:28Z-
dc.date.issued2018-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/151075-
dc.description.abstractIn order for TMD such as molybdenum disulfide (MoS2) to be useful for semiconductor industry, a controllable doping process is required. MoS2 with substitutional Nb shows a p-type behavior compared to the n-type characteristics of nominal films. In this work, the role of Nb in MoS2 will be examined, and a precise hole concentration control technique is demonstrated. Multi-layered Mo1-xNbxS2 samples with accurately controlled Nb mole fraction are synthesized. Electrical characterization and material analysis are performed to quantify the impact of Nb with mole fraction from 3.5% to 11%. The effective carrier concentration (p) and the ective hole mobility (mu(eff)) are found to be highly non-linear with respect to Nb mole fraction. Scanning Tunneling Microscope (STM) shows that the bandgap of the 2D transition metal dichalcogenide (TMD) is reduced by high mole fraction Nb. Therefore, Mo1-xNbxS2 can be considered as a compound TMD semiconductor.en_US
dc.language.isoen_USen_US
dc.titleElectrical Properties of Compound 2D Semiconductor Mo1-xNbxS2en_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)en_US
dc.citation.spage702en_US
dc.citation.epage705en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000458919700206en_US
dc.citation.woscount0en_US
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