標題: Novel Silicon Surface Pre-Treatment (SSPT) technique for CMOS device performance boosting
作者: Lee, Da-Yuan
Chen, C. C.
Huang, C. H.
Lim, P. S.
Chan, M. H.
Yeh, M. S.
Huang, C. S.
Tao, H. J.
Mii, Y. J.
光電工程學系
Department of Photonics
公開日期: 1-Jan-2008
摘要: In this paper, a novel surface treatment technique using Silicon Surface Pre-Treatment (SSPT) technique to boost high performance CMOS circuit is reported. This approach provides a smooth silicon surface and extends the effective channel width to enhance device performance on both N and PMOSFET. In this work, a smooth and rounded active area (AA) surface was successfully fabricated. Using this technique, we demonstrated a significant device boost of 15% and 7% on small dimension N and PMOSFET, respectively. These achievements were demonstrated without negative impact on GOI and NBTI.
URI: http://dx.doi.org/10.1109/VTSA.2008.4530790
http://hdl.handle.net/11536/151150
DOI: 10.1109/VTSA.2008.4530790
期刊: 2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM
起始頁: 42
Appears in Collections:Conferences Paper