1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Kejianen_US
dc.contributor.authorLi, Yutaien_US
dc.contributor.authorCheung, WingYiuen_US
dc.contributor.authorWang, Weiwenen_US
dc.contributor.authorPan, CiLingen_US
dc.contributor.authorChan, KarriTaien_US
dc.date.accessioned2019-04-02T06:04:43Z-
dc.date.available2019-04-02T06:04:43Z-
dc.date.issued2007-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/151152-
dc.description.abstractOxygen Implanted GaAs was used for terahertz wave emitter fabricatiom CW Terahertz waves are measured from this kind of material. We take sampling in the range of 0.25 to 0.5 THz. The measured output power is in ten nW range.en_US
dc.language.isoen_USen_US
dc.titleCW sub-terahertz wave generation by GaAs : O materialsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4en_US
dc.citation.spage80en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000256956600040en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


Related Contents
Loading...