CW sub-terahertz wave generation by GaAs : O materials

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Kejian	en_US
dc.contributor.author	Li, Yutai	en_US
dc.contributor.author	Cheung, WingYiu	en_US
dc.contributor.author	Wang, Weiwen	en_US
dc.contributor.author	Pan, CiLing	en_US
dc.contributor.author	Chan, KarriTai	en_US
dc.date.accessioned	2019-04-02T06:04:43Z	-
dc.date.available	2019-04-02T06:04:43Z	-
dc.date.issued	2007-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/151152	-
dc.description.abstract	Oxygen Implanted GaAs was used for terahertz wave emitter fabricatiom CW Terahertz waves are measured from this kind of material. We take sampling in the range of 0.25 to 0.5 THz. The measured output power is in ten nW range.	en_US
dc.language.iso	en_US	en_US
dc.title	CW sub-terahertz wave generation by GaAs : O materials	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4	en_US
dc.citation.spage	80	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000256956600040	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文