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dc.contributor.authorLai, Fang-, Ien_US
dc.contributor.authorHuang, H. W.en_US
dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorLai, C. F.en_US
dc.contributor.authorLu, T. C.en_US
dc.contributor.authorKu, H. C.en_US
dc.contributor.authorWang, S. C.en_US
dc.date.accessioned2019-04-02T06:04:49Z-
dc.date.available2019-04-02T06:04:49Z-
dc.date.issued2007-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/151172-
dc.description.abstractThe InGaN/GaN nanorods LED was successfully fabricated by ICP-RIE and PEC processes. Compared with as-grown sample, the PL and EL peak-wavelengths of the nanorods with PEC show 8.6 and 10.5 nm blue-shift, respectively. (c) 2007 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleInGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2007 CONFERENCE ON LASERS & ELECTRO-OPTICS/QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2007), VOLS 1-5en_US
dc.citation.spage175en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000268751000088en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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