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dc.contributor.authorShieh, Jia-Minen_US
dc.contributor.authorYu, Wen-Chienen_US
dc.contributor.authorWang, Chao-Keien_US
dc.contributor.authorDai, Bau-Tongen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHuang, Jung Y.en_US
dc.contributor.authorPan, C-Lingen_US
dc.date.accessioned2019-04-02T06:04:47Z-
dc.date.available2019-04-02T06:04:47Z-
dc.date.issued2009-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/151178-
dc.description.abstractFully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths lambda=1.55 mu m, photoresponse as high as 2.0A/W was measured. (C) 2009 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleNear Infrared Silicon Quantum Dots MOSFET Detectoren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5en_US
dc.citation.spage130en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274751300066en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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