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DC FieldValueLanguage
dc.contributor.authorChao-Hsin CHIENen_US
dc.contributor.authorChen-Han CHOUen_US
dc.contributor.authorCheng-Ting CHUNGen_US
dc.contributor.authorSamuel C. PANen_US
dc.date.accessioned2019-04-11T05:42:42Z-
dc.date.available2019-04-11T05:42:42Z-
dc.date.issued2017-05-04en_US
dc.identifier.govdocH01L027/088en_US
dc.identifier.govdocH01L029/08en_US
dc.identifier.govdocH01L027/02en_US
dc.identifier.govdocH01L021/8234en_US
dc.identifier.govdocH01L029/78en_US
dc.identifier.govdocH01L029/06en_US
dc.identifier.govdocH01L029/423en_US
dc.identifier.urihttp://hdl.handle.net/11536/151271-
dc.description.abstractA semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.en_US
dc.language.isoen_USen_US
dc.titleFINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTHen_US
dc.typePatentsen_US
dc.citation.patentcountryUSAen_US
dc.citation.patentnumber20170125415en_US
Appears in Collections:Patents


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