FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chao-Hsin CHIEN	en_US
dc.contributor.author	Chen-Han CHOU	en_US
dc.contributor.author	Cheng-Ting CHUNG	en_US
dc.contributor.author	Samuel C. PAN	en_US
dc.date.accessioned	2019-04-11T05:42:42Z	-
dc.date.available	2019-04-11T05:42:42Z	-
dc.date.issued	2017-05-04	en_US
dc.identifier.govdoc	H01L027/088	en_US
dc.identifier.govdoc	H01L029/08	en_US
dc.identifier.govdoc	H01L027/02	en_US
dc.identifier.govdoc	H01L021/8234	en_US
dc.identifier.govdoc	H01L029/78	en_US
dc.identifier.govdoc	H01L029/06	en_US
dc.identifier.govdoc	H01L029/423	en_US
dc.identifier.uri	http://hdl.handle.net/11536/151271	-
dc.description.abstract	A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.	en_US
dc.language.iso	en_US	en_US
dc.title	FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH	en_US
dc.type	Patents	en_US
dc.citation.patentcountry	USA	en_US
dc.citation.patentnumber	20170125415	en_US
顯示於類別：	專利資料

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