Title: FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH
Authors: Chao-Hsin CHIEN
Chen-Han CHOU
Cheng-Ting CHUNG
Samuel C. PAN
Issue Date: 4-May-2017
Abstract: A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.
Gov't Doc #: H01L027/088
H01L029/08
H01L027/02
H01L021/8234
H01L029/78
H01L029/06
H01L029/423
URI: http://hdl.handle.net/11536/151271
Patent Country: USA
Patent Number: 20170125415
Appears in Collections:Patents


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