Title: | FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH |
Authors: | Chao-Hsin CHIEN Chen-Han CHOU Cheng-Ting CHUNG Samuel C. PAN |
Issue Date: | 4-May-2017 |
Abstract: | A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction. |
Gov't Doc #: | H01L027/088 H01L029/08 H01L027/02 H01L021/8234 H01L029/78 H01L029/06 H01L029/423 |
URI: | http://hdl.handle.net/11536/151271 |
Patent Country: | USA |
Patent Number: | 20170125415 |
Appears in Collections: | Patents |
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