標題: A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-kappa/Metal Gate Device
作者: Li, Yiming
Cheng, Hui-Wen
Chiu, Yung-Yueh
Yiu, Chun-Yen
Su, Hsin-Wen
電機工程學系
Department of Electrical and Computer Engineering
公開日期: 2011
摘要: In this work, we for the first time estimate total fluctuation resulting from random dopants (RDs), interface trap (ITs) and work functions (WKs) using experimentally calibrated 3D device simulation on 16-nm-gate high-kappa/metal gate devices. The total 3D simulated threshold voltage fluctuation (sigma V-th), induced by the aforementioned random sources simultaneously, is 55.5 mV for NMOS; however, a statistical total sum of these fluctuations is 12.3% overestimation because independence assumption on random variables is invalid owing to strong interactions among RDs, ITs and WKs. Device's DC/AC and CMOS SRAM circuit fluctuations have similar observation. FinFET-based structure innovation possessing large fluctuation suppression (sigma V-th = 30.2 mV; 45.6% reduction), compared with process efforts on planar one, is further discussed.
URI: http://hdl.handle.net/11536/15145
ISBN: 978-1-4577-0505-2
期刊: 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Appears in Collections:Conferences Paper