標題: | A Unified 3D Device Simulation of Random Dopant, Interface Trap and Work Function Fluctuations on High-kappa/Metal Gate Device |
作者: | Li, Yiming Cheng, Hui-Wen Chiu, Yung-Yueh Yiu, Chun-Yen Su, Hsin-Wen 電機工程學系 Department of Electrical and Computer Engineering |
公開日期: | 2011 |
摘要: | In this work, we for the first time estimate total fluctuation resulting from random dopants (RDs), interface trap (ITs) and work functions (WKs) using experimentally calibrated 3D device simulation on 16-nm-gate high-kappa/metal gate devices. The total 3D simulated threshold voltage fluctuation (sigma V-th), induced by the aforementioned random sources simultaneously, is 55.5 mV for NMOS; however, a statistical total sum of these fluctuations is 12.3% overestimation because independence assumption on random variables is invalid owing to strong interactions among RDs, ITs and WKs. Device's DC/AC and CMOS SRAM circuit fluctuations have similar observation. FinFET-based structure innovation possessing large fluctuation suppression (sigma V-th = 30.2 mV; 45.6% reduction), compared with process efforts on planar one, is further discussed. |
URI: | http://hdl.handle.net/11536/15145 |
ISBN: | 978-1-4577-0505-2 |
期刊: | 2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) |
Appears in Collections: | Conferences Paper |