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dc.contributor.authorRAY-HUA HORNGen_US
dc.contributor.authorYEN-CHU LIen_US
dc.contributor.authorCHUN-YI TUNGen_US
dc.contributor.authorSI-HAN TSAIen_US
dc.contributor.authorLI-CHUNG CHENGen_US
dc.date.accessioned2019-04-11T06:20:39Z-
dc.date.available2019-04-11T06:20:39Z-
dc.date.issued2019-03-14en_US
dc.identifier.govdocH01L031/18en_US
dc.identifier.govdocH01L031/032en_US
dc.identifier.govdocC30B029/26en_US
dc.identifier.govdocC30B025/18en_US
dc.identifier.urihttp://hdl.handle.net/11536/151509-
dc.description.abstractThe present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced.en_US
dc.language.isoen_USen_US
dc.titleMETHOD FOR MANUFACTURING WIDE-BANDGAP OXIDE EPITAXIAL FILMen_US
dc.typePatentsen_US
dc.citation.patentcountryUSAen_US
dc.citation.patentnumber20190081197en_US
Appears in Collections:Patents


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