METHOD FOR MANUFACTURING WIDE-BANDGAP OXIDE EPITAXIAL FILM

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	RAY-HUA HORNG	en_US
dc.contributor.author	YEN-CHU LI	en_US
dc.contributor.author	CHUN-YI TUNG	en_US
dc.contributor.author	SI-HAN TSAI	en_US
dc.contributor.author	LI-CHUNG CHENG	en_US
dc.date.accessioned	2019-04-11T06:20:39Z	-
dc.date.available	2019-04-11T06:20:39Z	-
dc.date.issued	2019-03-14	en_US
dc.identifier.govdoc	H01L031/18	en_US
dc.identifier.govdoc	H01L031/032	en_US
dc.identifier.govdoc	C30B029/26	en_US
dc.identifier.govdoc	C30B025/18	en_US
dc.identifier.uri	http://hdl.handle.net/11536/151509	-
dc.description.abstract	The present invention provides a method for manufacturing a wide-bandgap oxide epitaxial film. An epitaxial film with superior physical properties, such as high saturated drift velocity of electrons, small dielectric constant, high thermal stability, and excellent high-temperature resistance, is formed on a substrate. In addition, because the oxide epitaxial film is grown by metal-organic chemical vapor deposition (MOCVD), the yield is improved significantly and defects in the epitaxy is reduced.	en_US
dc.language.iso	en_US	en_US
dc.title	METHOD FOR MANUFACTURING WIDE-BANDGAP OXIDE EPITAXIAL FILM	en_US
dc.type	Patents	en_US
dc.citation.patentcountry	USA	en_US
dc.citation.patentnumber	20190081197	en_US
顯示於類別：	專利資料

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