Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 洪瑞華 | zh_TW |
| dc.contributor.author | 李彥助 | zh_TW |
| dc.contributor.author | 董俊沂 | zh_TW |
| dc.contributor.author | 蔡錫翰 | zh_TW |
| dc.contributor.author | 鄭力中 | zh_TW |
| dc.date.accessioned | 2019-04-11T06:20:44Z | - |
| dc.date.available | 2019-04-11T06:20:44Z | - |
| dc.date.issued | 2019-04-01 | en_US |
| dc.identifier.govdoc | H01L021/205 | en_US |
| dc.identifier.govdoc | C23C016/06 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/151530 | - |
| dc.description.abstract | 本發明為一種寬能隙氧化物磊晶薄膜之製造方法，其利用一氧化物磊晶薄膜形成於基板，使其具較佳之物理特性，例如:電子漂移飽和速度快，介電常數小，熱穩定性好，且耐高溫。此外，由於氧化物磊晶薄膜為採用一有機金屬化學氣相沉積製程，使得氧化物磊晶薄膜之良率大幅提高，並減少磊晶瑕疵。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 寬能隙氧化物磊晶薄膜之製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | en_US |
| dc.citation.patentnumber | 201913742 | en_US |
| Appears in Collections: | Patents | |
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