标题: Comparison of the Physical and Electrical Properties of HfO2/Al2O3/HfO2/GeOx/Ge and HfO2/Al2O3/GeOx/Ge Gate Stacks
作者: Tsai, Yi-He
Chou, Chen-Han
Li, Hui-Hsuan
Yeh, Wen-Kuan
Lino, Yu-Hsien
Ko, Fu-Hsiang
Chien, Chao-Hsin
材料科学与工程学系奈米科技硕博班
电子工程学系及电子研究所
Graduate Program of Nanotechnology , Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
关键字: Aluminum Oxide (Al2O3 );Constant Voltage Stress (CVS);Germanium;Germanium Oxide (GeOx);Hafnium Oxide (HfO2);Plasma-Enhanced Atomic Layer Deposition (PEALD)
公开日期: 1-八月-2019
摘要: A high-quality HfGeOx interfacial layer (IL) was formed in a HfO2/Al2O3/HfO2/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO2 layer led to the mixing of the GeOx and HfO2 layers, as identified through energy-dispersive X-ray Spectroscopy (EDX). X-ray photo-electron spectroscopy (XPS) data for HfGeOx IL confirmed the formation of Ge-O-Hf bonds owing to the induced shift of the Ge3d(ox) spectra to lower binding energies. The electrical and reliability data indicated that the capacitor with HfGeOx IL presented not only lower interface states density (Dit, approximately 7 x 10(11) eV(-1)cm(-2)) but also less Dit increment (approximately 3 x 10(11) eV(-1)cm(-2)) after stressing than did the capacitor without the HfGeOx IL. Moreover, the Ge p-metal-oxide-semiconductor field-effect transistor HfGeOx IL exhibited a high effective hole mobility (approximately 704 cm(2)/V . s).
URI: http://dx.doi.org/10.1166/jnn.2019.16494
http://hdl.handle.net/11536/151626
ISSN: 1533-4880
DOI: 10.1166/jnn.2019.16494
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 19
Issue: 8
起始页: 4529
结束页: 4534
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