标题: | Comparison of the Physical and Electrical Properties of HfO2/Al2O3/HfO2/GeOx/Ge and HfO2/Al2O3/GeOx/Ge Gate Stacks |
作者: | Tsai, Yi-He Chou, Chen-Han Li, Hui-Hsuan Yeh, Wen-Kuan Lino, Yu-Hsien Ko, Fu-Hsiang Chien, Chao-Hsin 材料科学与工程学系奈米科技硕博班 电子工程学系及电子研究所 Graduate Program of Nanotechnology , Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics |
关键字: | Aluminum Oxide (Al2O3 );Constant Voltage Stress (CVS);Germanium;Germanium Oxide (GeOx);Hafnium Oxide (HfO2);Plasma-Enhanced Atomic Layer Deposition (PEALD) |
公开日期: | 1-八月-2019 |
摘要: | A high-quality HfGeOx interfacial layer (IL) was formed in a HfO2/Al2O3/HfO2/GeOx gate stack through thermal annealing. The diffusing of GeO into the HfO2 layer led to the mixing of the GeOx and HfO2 layers, as identified through energy-dispersive X-ray Spectroscopy (EDX). X-ray photo-electron spectroscopy (XPS) data for HfGeOx IL confirmed the formation of Ge-O-Hf bonds owing to the induced shift of the Ge3d(ox) spectra to lower binding energies. The electrical and reliability data indicated that the capacitor with HfGeOx IL presented not only lower interface states density (Dit, approximately 7 x 10(11) eV(-1)cm(-2)) but also less Dit increment (approximately 3 x 10(11) eV(-1)cm(-2)) after stressing than did the capacitor without the HfGeOx IL. Moreover, the Ge p-metal-oxide-semiconductor field-effect transistor HfGeOx IL exhibited a high effective hole mobility (approximately 704 cm(2)/V . s). |
URI: | http://dx.doi.org/10.1166/jnn.2019.16494 http://hdl.handle.net/11536/151626 |
ISSN: | 1533-4880 |
DOI: | 10.1166/jnn.2019.16494 |
期刊: | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY |
Volume: | 19 |
Issue: | 8 |
起始页: | 4529 |
结束页: | 4534 |
显示于类别: | Articles |