完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHao, Jigongen_US
dc.contributor.authorLi, Weien_US
dc.contributor.authorZhai, Jiweien_US
dc.contributor.authorChen, Haydnen_US
dc.date.accessioned2019-05-02T00:25:54Z-
dc.date.available2019-05-02T00:25:54Z-
dc.date.issued2019-01-01en_US
dc.identifier.issn0927-796Xen_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mser.2018.08.001en_US
dc.identifier.urihttp://hdl.handle.net/11536/151631-
dc.description.abstractHigh strain piezoelectric ceramics are the state-of-the-art materials for high precision, positioning devices. A comprehensive review of the latest developments of the various types of perovskite piezoelectric ceramic systems is presented herein, with special attention given to three promising families of lead-free perovskite ferroelectrics: the barium titanate, alkaline niobate and bismuth perovskites. Included in this review are details of phase transition behavior, strain enhancement approaches, material reliabilities as well as the status of some promising applications. This current review describes both compositional and structural engineering approaches that are intended to achieve enhanced strain properties in perovskite piezoelectric ceramics. The factors that affect the strain behavior of high-strain perovskite piezoelectric ceramics are addressed. The reliability characteristics of these high-strain ferroelectrics as well as the recent approaches to the long-term electrical, thermal and time-stability enhancement are summarized. Several promising applications of high-strain perovskite materials are introduced, which take advantages of their characteristics; examples include high-energy storage, pyroelectric and electro-caloric effect and luminescent properties.en_US
dc.language.isoen_USen_US
dc.subjectPiezoelectricsen_US
dc.subjectPerovskiteen_US
dc.subjectPhase transitionen_US
dc.subjectElectric field-induced strainen_US
dc.subjectReliabilityen_US
dc.titleProgress in high-strain perovskite piezoelectric ceramicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mser.2018.08.001en_US
dc.identifier.journalMATERIALS SCIENCE & ENGINEERING R-REPORTSen_US
dc.citation.volume135en_US
dc.citation.spage1en_US
dc.citation.epage57en_US
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000462419200001en_US
dc.citation.woscount5en_US
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