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dc.contributor.authorWei, Pai-Chunen_US
dc.contributor.authorBhattacharya, Sriparnaen_US
dc.contributor.authorLiu, Yu-Feien_US
dc.contributor.authorLiu, Fengjiaoen_US
dc.contributor.authorHe, Jianen_US
dc.contributor.authorTung, Yung-Hsiangen_US
dc.contributor.authorYang, Chun-Cheunen_US
dc.contributor.authorHsing, Cheng-Rongen_US
dc.contributor.authorNguyen, Duc-Longen_US
dc.contributor.authorWei, Ching-Mingen_US
dc.contributor.authorChou, Mei-Yinen_US
dc.contributor.authorLai, Yen-Chungen_US
dc.contributor.authorHung, Tsu-Lienen_US
dc.contributor.authorGuan, Syu-Youen_US
dc.contributor.authorChang, Chia-Sengen_US
dc.contributor.authorWu, Hsin-Jayen_US
dc.contributor.authorLee, Chi-Hungen_US
dc.contributor.authorLi, Wen-Hsienen_US
dc.contributor.authorHermann, Raphael P.en_US
dc.contributor.authorChen, Yang-Yuanen_US
dc.contributor.authorRao, Apparao M.en_US
dc.date.accessioned2019-05-02T00:25:56Z-
dc.date.available2019-05-02T00:25:56Z-
dc.date.issued2019-03-01en_US
dc.identifier.issn2470-1343en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acsomega.8b03323en_US
dc.identifier.urihttp://hdl.handle.net/11536/151655-
dc.description.abstractSingle-crystalline SnSe has attracted much attention because of its record high figure-of-merit ZT approximate to 2.6; however, this high ZT has been associated with the low mass density of samples which leaves the intrinsic ZT of fully dense pristine SnSe in question. To this end, we prepared high-quality fully dense SnSe single crystals and performed detailed structural, electrical, and thermal transport measurements over a wide temperature range along the major crystallographic directions. Our single crystals were fully dense and of high purity as confirmed via high statistics Sn-119 Mossbauer spectroscopy that revealed < 0.35 at. % Sn(IV) in pristine SnSe. The temperature-dependent heat capacity (C-p) provided evidence for the displacive second-order phase transition from Pnma to Cmcm phase at T-c approximate to 800 K and a small but finite Sommerfeld coefficient gamma(0) which implied the presence of a finite Fermi surface. Interestingly, despite its strongly temperature-dependent band gap inferred from density functional theory calculations, SnSe behaves like a low-carrier-concentration multiband metal below 600 K, above which it exhibits a semiconducting behavior. Notably, our high-quality single-crystalline SnSe exhibits a thermoelectric figure-of-merit ZT similar to 1.0, similar to 0.8, and similar to 0.25 at 850 K along the b, c, and a directions, respectively.en_US
dc.language.isoen_USen_US
dc.titleThermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSeen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acsomega.8b03323en_US
dc.identifier.journalACS OMEGAen_US
dc.citation.volume4en_US
dc.citation.issue3en_US
dc.citation.spage5442en_US
dc.citation.epage5450en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000462921900099en_US
dc.citation.woscount0en_US
Appears in Collections:Articles