標題: | Thermoelectric Figure-of-Merit of Fully Dense Single-Crystalline SnSe |
作者: | Wei, Pai-Chun Bhattacharya, Sriparna Liu, Yu-Fei Liu, Fengjiao He, Jian Tung, Yung-Hsiang Yang, Chun-Cheun Hsing, Cheng-Rong Nguyen, Duc-Long Wei, Ching-Ming Chou, Mei-Yin Lai, Yen-Chung Hung, Tsu-Lien Guan, Syu-You Chang, Chia-Seng Wu, Hsin-Jay Lee, Chi-Hung Li, Wen-Hsien Hermann, Raphael P. Chen, Yang-Yuan Rao, Apparao M. 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 1-Mar-2019 |
摘要: | Single-crystalline SnSe has attracted much attention because of its record high figure-of-merit ZT approximate to 2.6; however, this high ZT has been associated with the low mass density of samples which leaves the intrinsic ZT of fully dense pristine SnSe in question. To this end, we prepared high-quality fully dense SnSe single crystals and performed detailed structural, electrical, and thermal transport measurements over a wide temperature range along the major crystallographic directions. Our single crystals were fully dense and of high purity as confirmed via high statistics Sn-119 Mossbauer spectroscopy that revealed < 0.35 at. % Sn(IV) in pristine SnSe. The temperature-dependent heat capacity (C-p) provided evidence for the displacive second-order phase transition from Pnma to Cmcm phase at T-c approximate to 800 K and a small but finite Sommerfeld coefficient gamma(0) which implied the presence of a finite Fermi surface. Interestingly, despite its strongly temperature-dependent band gap inferred from density functional theory calculations, SnSe behaves like a low-carrier-concentration multiband metal below 600 K, above which it exhibits a semiconducting behavior. Notably, our high-quality single-crystalline SnSe exhibits a thermoelectric figure-of-merit ZT similar to 1.0, similar to 0.8, and similar to 0.25 at 850 K along the b, c, and a directions, respectively. |
URI: | http://dx.doi.org/10.1021/acsomega.8b03323 http://hdl.handle.net/11536/151655 |
ISSN: | 2470-1343 |
DOI: | 10.1021/acsomega.8b03323 |
期刊: | ACS OMEGA |
Volume: | 4 |
Issue: | 3 |
起始頁: | 5442 |
結束頁: | 5450 |
Appears in Collections: | Articles |