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dc.contributor.authorChen, Yu-Chenen_US
dc.contributor.authorHsieh, Pin-Hsienen_US
dc.contributor.authorLin, Grayen_US
dc.date.accessioned2019-05-02T00:25:58Z-
dc.date.available2019-05-02T00:25:58Z-
dc.date.issued2019-01-01en_US
dc.identifier.issn1934-2608en_US
dc.identifier.urihttp://dx.doi.org/10.1117/1.JNP.13.016001en_US
dc.identifier.urihttp://hdl.handle.net/11536/151690-
dc.description.abstractMonolithic passively mode-locked lasers are investigated based on chirped multi-layer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light-current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)en_US
dc.language.isoen_USen_US
dc.subjectquantum dotsen_US
dc.subjectmode-locked lasersen_US
dc.subjectsemiconductor lasersen_US
dc.subjectmolecular beam epitaxyen_US
dc.subjectdual-wavelength lasersen_US
dc.titleChirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissionsen_US
dc.typeArticleen_US
dc.identifier.doi10.1117/1.JNP.13.016001en_US
dc.identifier.journalJOURNAL OF NANOPHOTONICSen_US
dc.citation.volume13en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000463889400008en_US
dc.citation.woscount0en_US
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