Influence of basal stacking faults on luminescence of m-plane Mg0.19Zn0.81O/ZnO quantum wells grown on a two-step MgZnO-buffer layer

Abstract

Different well widths of m-plane Mg0.19Zn0.81O/ZnO multiple quantum wells (MQWs) have been fabricated on the two-step pregrown MgZnO-buffered m-plane sapphires by a pulsed laser deposition and have a narrower linewidth on x-ray diffraction than ZnO-buffered MQWs. By using the variation method to calculate the band diagram and by corroborating the results of temperature-dependent photoluminescence, we confirm the binding energies of free exciton and basal-stacking-fault-bound exciton, which is composed of electrons in the barrier and confined hole in the narrow-width MQWs. The coupling of A1(LO) phonon with excitons in m-MQWs shows more sensitivity toward a decrease in well width than E2(low), due to the crystal symmetry and the reduced Bohr radius. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)