完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHsieh, MCen_US
dc.contributor.authorTseng, TYen_US
dc.contributor.authorFu, CMen_US
dc.contributor.authorWu, KHen_US
dc.contributor.authorJuang, JYen_US
dc.contributor.authorUen, TMen_US
dc.contributor.authorGou, YSen_US
dc.date.accessioned2014-12-08T15:02:54Z-
dc.date.available2014-12-08T15:02:54Z-
dc.date.issued1996en_US
dc.identifier.issn0011-4626en_US
dc.identifier.urihttp://hdl.handle.net/11536/1517-
dc.identifier.urihttp://dx.doi.org/10.1007/BF02583843en_US
dc.description.abstractBy varying oxygen content of the microstrip line resonator of YBa2Cu3O7-x, the effective penetration depth was studied. Based on the two-fluid model, we fit the data of the resonant frequency by means of the inductance formula. It allows us to determine the zero-temperature penetration depth of the fully oxygenated,(O approximate to 7) and oxygen deficient (O = 6.8) states in the same strip to be 483.2 nm and 789.8 nm, respectively. The ratio of the superconducting carrier densities with different oxygen contents is then derived and found to be consistent with the result of Hall measurement. A correlation between oxygen contents and charge carriers of the samples will be obtained in our work as accurately as possible.en_US
dc.language.isoen_USen_US
dc.titleEffects of oxygen content on the penetration depth in YBCO thin filmsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1007/BF02583843en_US
dc.identifier.journalCZECHOSLOVAK JOURNAL OF PHYSICSen_US
dc.citation.volume46en_US
dc.citation.spage1071en_US
dc.citation.epage1072en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1996VL43900259-
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