完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Hsieh, MC | en_US |
dc.contributor.author | Tseng, TY | en_US |
dc.contributor.author | Fu, CM | en_US |
dc.contributor.author | Wu, KH | en_US |
dc.contributor.author | Juang, JY | en_US |
dc.contributor.author | Uen, TM | en_US |
dc.contributor.author | Gou, YS | en_US |
dc.date.accessioned | 2014-12-08T15:02:54Z | - |
dc.date.available | 2014-12-08T15:02:54Z | - |
dc.date.issued | 1996 | en_US |
dc.identifier.issn | 0011-4626 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1517 | - |
dc.identifier.uri | http://dx.doi.org/10.1007/BF02583843 | en_US |
dc.description.abstract | By varying oxygen content of the microstrip line resonator of YBa2Cu3O7-x, the effective penetration depth was studied. Based on the two-fluid model, we fit the data of the resonant frequency by means of the inductance formula. It allows us to determine the zero-temperature penetration depth of the fully oxygenated,(O approximate to 7) and oxygen deficient (O = 6.8) states in the same strip to be 483.2 nm and 789.8 nm, respectively. The ratio of the superconducting carrier densities with different oxygen contents is then derived and found to be consistent with the result of Hall measurement. A correlation between oxygen contents and charge carriers of the samples will be obtained in our work as accurately as possible. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Effects of oxygen content on the penetration depth in YBCO thin films | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1007/BF02583843 | en_US |
dc.identifier.journal | CZECHOSLOVAK JOURNAL OF PHYSICS | en_US |
dc.citation.volume | 46 | en_US |
dc.citation.spage | 1071 | en_US |
dc.citation.epage | 1072 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1996VL43900259 | - |
顯示於類別: | 會議論文 |