完整後設資料紀錄
DC 欄位語言
dc.contributor.authorMurthy, Lakshmi N. S.en_US
dc.contributor.authorBarrera, Diegoen_US
dc.contributor.authorXu, Liangen_US
dc.contributor.authorGadh, Aakashen_US
dc.contributor.authorCao, Fong-Yien_US
dc.contributor.authorTseng, Cheng-Chunen_US
dc.contributor.authorCheng, Yen-Juen_US
dc.contributor.authorHsu, Julia W. P.en_US
dc.date.accessioned2019-06-03T01:08:35Z-
dc.date.available2019-06-03T01:08:35Z-
dc.date.issued2019-05-02en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.jpcc.9b01667en_US
dc.identifier.urihttp://hdl.handle.net/11536/151953-
dc.description.abstractWe performed frequency-modulated (AC) and steady-state (DC) surface photovoltage spectroscopy (SPS) measurements on a bilayer structure consisting of an organic semiconductor (P3HT, P3HT:PC61BM, or PFBT2Se2Th:PC71BM) on top of a ZnO electron-transport layer. The AC spectra overlap with the absorption spectra of the organic layer, providing evidence that AC SPS corresponds to band-to-band transitions. The DC spectra are generally broader than the AC spectra, with responses extended below the absorption edge. Thus, DC SPS also probes transitions between band states and trap states within the band gap in addition to band-to-band transitions. When a hole-transport layer (HTL) is deposited on top of the organic layer, the DC spectra of P3HT and P3HT:PC61BM are narrower than those without the HTL, suggesting that the sub-band gap states exist at the surface of these organic semiconductors. In contrast, PFBT2Se2Th:PC71BM does not show signature of surface states or optically active trap states in the band gap. External quantum efficiency and capacitance measurements are employed to explain the nature of sub-band gap states that contribute to surface photovoltage signals and the differences between the two bulk heterojunction systems.en_US
dc.language.isoen_USen_US
dc.titleProbing Defect States in Organic Polymers and Bulk Heterojunctions Using Surface Photovoltage Spectroscopyen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.jpcc.9b01667en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume123en_US
dc.citation.issue17en_US
dc.citation.spage10795en_US
dc.citation.epage10801en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.identifier.wosnumberWOS:000466988600010en_US
dc.citation.woscount0en_US
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