標題: | Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction |
作者: | Shen, Chih-Chiang Lu, Yun-Ting Yeh, Yen-Wei Chen, Cheng-Yuan Chen, Yu-Tzu Sher, Chin-Wei Lee, Po-Tsung Shih, Ya-Hsuan Lu, Tien-Chang Wu, Tingzhu Chiu, Ching-Hsueh Kuo, Hao-Chung 電機學院 光電工程學系 College of Electrical and Computer Engineering Department of Photonics |
關鍵字: | InGaN;VCSEL;tunnel junction |
公開日期: | 1-四月-2019 |
摘要: | In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J(th)) from 12 to 8.5 kA/cm(2), and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 degrees C) and high operation current (1.5 x J(th)) test for over 500 h. |
URI: | http://dx.doi.org/10.3390/cryst9040187 http://hdl.handle.net/11536/151965 |
ISSN: | 2073-4352 |
DOI: | 10.3390/cryst9040187 |
期刊: | CRYSTALS |
Volume: | 9 |
Issue: | 4 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |