標題: Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction
作者: Shen, Chih-Chiang
Lu, Yun-Ting
Yeh, Yen-Wei
Chen, Cheng-Yuan
Chen, Yu-Tzu
Sher, Chin-Wei
Lee, Po-Tsung
Shih, Ya-Hsuan
Lu, Tien-Chang
Wu, Tingzhu
Chiu, Ching-Hsueh
Kuo, Hao-Chung
電機學院
光電工程學系
College of Electrical and Computer Engineering
Department of Photonics
關鍵字: InGaN;VCSEL;tunnel junction
公開日期: 1-Apr-2019
摘要: In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J(th)) from 12 to 8.5 kA/cm(2), and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 degrees C) and high operation current (1.5 x J(th)) test for over 500 h.
URI: http://dx.doi.org/10.3390/cryst9040187
http://hdl.handle.net/11536/151965
ISSN: 2073-4352
DOI: 10.3390/cryst9040187
期刊: CRYSTALS
Volume: 9
Issue: 4
起始頁: 0
結束頁: 0
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