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dc.contributor.authorLiao, P. H.en_US
dc.contributor.authorKuo, M. H.en_US
dc.contributor.authorTien, C. W.en_US
dc.contributor.authorChang, Y. L.en_US
dc.contributor.authorHong, P. Y.en_US
dc.contributor.authorGeorge, T.en_US
dc.contributor.authorLin, H. C.en_US
dc.contributor.authorLi, P. W.en_US
dc.date.accessioned2019-06-03T01:09:17Z-
dc.date.available2019-06-03T01:09:17Z-
dc.date.issued2018-01-01en_US
dc.identifier.isbn978-1-5386-4218-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/152030-
dc.description.abstractWe report the first-of-its-kind, self-organized gate stack of Ge nanosphere (NP) gate/SiO2/Si1-xGex channel fabricated in a single oxidation step. Process-controlled tunability of the Ge NP size (5-90nm), SiO2 thickness (2-4nm), and Ge content (x = 0.65-0.85) and strain engineering (epsilon(comp) = 1-3%) of the Si1-xGex are achieved. We demonstrated Ge junctionless (JL) n-FETs and photoMOSFETs (PTs) as amplifier and photodetector, respectively, for Ge receivers. L-G of 75nm JL n-FETs feature I-ON/I-OFF > 5x10(8), I-ON > 500 mu A/mu m at V-DS = 1V, T= 80K. Ge-PTs exhibit superior photoresponsivity > 1,000A/W and current gain linearity ranging from nW-mW for 850nm illumination. Size-tunable photo-luminescence (PL) of 300-1600nm (NUV-NIR) are observed on 5-100nm Ge NPs. Our gate stack of Ge NP/SiO2/Si1-xGex enables a practically achievable building block for monolithically-integrated Ge electronic and photonic ICs (EPICs) on Si.en_US
dc.language.isoen_USen_US
dc.subjectGeen_US
dc.subjectjunctionlessen_US
dc.subjectphototransistoren_US
dc.subjectmonolithic integrationen_US
dc.titleSelf-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platformen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 IEEE SYMPOSIUM ON VLSI TECHNOLOGYen_US
dc.citation.spage157en_US
dc.citation.epage158en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000465075200059en_US
dc.citation.woscount1en_US
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