完整後設資料紀錄
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dc.contributor.authorYang, Chih-chiehen_US
dc.contributor.authorTsai, Hung-yien_US
dc.contributor.authorTseng, Tseung-yuenen_US
dc.date.accessioned2019-08-02T02:14:48Z-
dc.date.available2019-08-02T02:14:48Z-
dc.date.issued2018-01-01en_US
dc.identifier.isbn978-1-6059-5611-4en_US
dc.identifier.issn2475-8841en_US
dc.identifier.urihttp://hdl.handle.net/11536/152129-
dc.description.abstractSupercapacitors are energy storage devices to deal with problems of oil consumption and environmental pollutions. However, the specific capacitance of pure carbon-based electrodes is too low, and this problem is urgent to solve. The NiCo2S4 is an electrode material which can improve the specific capacitance of the supercapacitor. The NiCo2S4-based electrodes with different carbon-based materials such as carbon black, multiwall carbon nanotube (MWCNT) and graphene foam by slurry method are investigated in this study. The NiCo2S4 electrode with the graphene foam and CNTs demonstrates excellent electrochemical performance, which exhibits the specific capacitance of 2925 Fg(-1) and the area specific capacitance of 5.06 Fcm(-2) at current density of 1 Ag-1. This result is attributed to that the CNTs can create a conductive network for connection of the NiCo2S4 and porous graphene foam with sponge-like morphology. This structure can facilitate electrolyte into inner portion of the electrode material. It has a high potential to be applied to energy storage devices.en_US
dc.language.isoen_USen_US
dc.subjectPseudocapacitoren_US
dc.subjectElectrodeen_US
dc.subjectSpecific capacitanceen_US
dc.subjectHydrothermal processen_US
dc.titlePreparation of NiCo2S4-based Electrodes for Supercapacitor Applicationen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2018 INTERNATIONAL CONFERENCE ON COMPUTER, COMMUNICATIONS AND MECHATRONICS ENGINEERING (CCME 2018)en_US
dc.citation.volume332en_US
dc.citation.spage403en_US
dc.citation.epage409en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000473811700071en_US
dc.citation.woscount0en_US
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