完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Yang, Chih-chieh | en_US |
dc.contributor.author | Tsai, Hung-yi | en_US |
dc.contributor.author | Tseng, Tseung-yuen | en_US |
dc.date.accessioned | 2019-08-02T02:14:48Z | - |
dc.date.available | 2019-08-02T02:14:48Z | - |
dc.date.issued | 2018-01-01 | en_US |
dc.identifier.isbn | 978-1-6059-5611-4 | en_US |
dc.identifier.issn | 2475-8841 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152129 | - |
dc.description.abstract | Supercapacitors are energy storage devices to deal with problems of oil consumption and environmental pollutions. However, the specific capacitance of pure carbon-based electrodes is too low, and this problem is urgent to solve. The NiCo2S4 is an electrode material which can improve the specific capacitance of the supercapacitor. The NiCo2S4-based electrodes with different carbon-based materials such as carbon black, multiwall carbon nanotube (MWCNT) and graphene foam by slurry method are investigated in this study. The NiCo2S4 electrode with the graphene foam and CNTs demonstrates excellent electrochemical performance, which exhibits the specific capacitance of 2925 Fg(-1) and the area specific capacitance of 5.06 Fcm(-2) at current density of 1 Ag-1. This result is attributed to that the CNTs can create a conductive network for connection of the NiCo2S4 and porous graphene foam with sponge-like morphology. This structure can facilitate electrolyte into inner portion of the electrode material. It has a high potential to be applied to energy storage devices. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Pseudocapacitor | en_US |
dc.subject | Electrode | en_US |
dc.subject | Specific capacitance | en_US |
dc.subject | Hydrothermal process | en_US |
dc.title | Preparation of NiCo2S4-based Electrodes for Supercapacitor Application | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2018 INTERNATIONAL CONFERENCE ON COMPUTER, COMMUNICATIONS AND MECHATRONICS ENGINEERING (CCME 2018) | en_US |
dc.citation.volume | 332 | en_US |
dc.citation.spage | 403 | en_US |
dc.citation.epage | 409 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000473811700071 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |