完整後設資料紀錄
DC 欄位 | 值 | 語言 |
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dc.contributor.author | Huang, Jyun-Hong | en_US |
dc.contributor.author | Hsu, Hao-Hua | en_US |
dc.contributor.author | Wang, Ding | en_US |
dc.contributor.author | Lin, Wei-Ting | en_US |
dc.contributor.author | Cheng, Chun-Cheng | en_US |
dc.contributor.author | Lee, Yao-Jen | en_US |
dc.contributor.author | Hou, Tuo-Hung | en_US |
dc.date.accessioned | 2019-08-02T02:15:24Z | - |
dc.date.available | 2019-08-02T02:15:24Z | - |
dc.date.issued | 2019-06-19 | en_US |
dc.identifier.issn | 2045-2322 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1038/s41598-019-45142-x | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152152 | - |
dc.description.abstract | Two-dimensional (2D) molybdenum ditelluride (MoTe2) exhibits an intriguing polymorphic nature, showing stable semiconducting 2H and metallic 1T' phases at room temperature. Polymorphism in MoTe2 presents new opportunities in developing phase-change memory, high- performance transistors, and spintronic devices. However, it also poses challenges in synthesizing homogeneous MoTe2 with a precisely controlled phase. Recently, a new yet simple method using sputtering and 2D solid-phase crystallization (SPC) is proposed for synthesizing high-quality and large-area MoTe2. This study investigates the polymorphism control of MoTe2 synthesis using 2D SPC. The Te/Mo ratio and oxygen content in the as-sputtered films correlate strongly with the final phase and electrical properties of SPC MoTe2. Furthermore, the SPC thermal budget may be exploited for stabilizing a deterministic phase. The comprehensive experiments presented in this work demonstrate the versatile and precise controllability on the MoTe2 phase by using the simple 2D SPC technique. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1038/s41598-019-45142-x | en_US |
dc.identifier.journal | SCIENTIFIC REPORTS | en_US |
dc.citation.volume | 9 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000472030000043 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |