完整後設資料紀錄
DC 欄位語言
dc.contributor.authorHuang, Jyun-Hongen_US
dc.contributor.authorHsu, Hao-Huaen_US
dc.contributor.authorWang, Dingen_US
dc.contributor.authorLin, Wei-Tingen_US
dc.contributor.authorCheng, Chun-Chengen_US
dc.contributor.authorLee, Yao-Jenen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2019-08-02T02:15:24Z-
dc.date.available2019-08-02T02:15:24Z-
dc.date.issued2019-06-19en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-019-45142-xen_US
dc.identifier.urihttp://hdl.handle.net/11536/152152-
dc.description.abstractTwo-dimensional (2D) molybdenum ditelluride (MoTe2) exhibits an intriguing polymorphic nature, showing stable semiconducting 2H and metallic 1T' phases at room temperature. Polymorphism in MoTe2 presents new opportunities in developing phase-change memory, high- performance transistors, and spintronic devices. However, it also poses challenges in synthesizing homogeneous MoTe2 with a precisely controlled phase. Recently, a new yet simple method using sputtering and 2D solid-phase crystallization (SPC) is proposed for synthesizing high-quality and large-area MoTe2. This study investigates the polymorphism control of MoTe2 synthesis using 2D SPC. The Te/Mo ratio and oxygen content in the as-sputtered films correlate strongly with the final phase and electrical properties of SPC MoTe2. Furthermore, the SPC thermal budget may be exploited for stabilizing a deterministic phase. The comprehensive experiments presented in this work demonstrate the versatile and precise controllability on the MoTe2 phase by using the simple 2D SPC technique.en_US
dc.language.isoen_USen_US
dc.titlePolymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallizationen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-019-45142-xen_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume9en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000472030000043en_US
dc.citation.woscount0en_US
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