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dc.contributor.authorChiu, Ching-Hsuehen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.contributor.authorHan, Hau-Veien_US
dc.contributor.authorLiu, Che-Yuen_US
dc.contributor.authorChen, Yan-Haoen_US
dc.contributor.authorLan, Yu-Pinen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:21:23Z-
dc.date.available2014-12-08T15:21:23Z-
dc.date.issued2012-02-03en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/23/4/045303en_US
dc.identifier.urihttp://hdl.handle.net/11536/15216-
dc.description.abstractIn this paper, the high performance GaN-based light-emitting diodes (LEDs) with embedded microscale air voids and an SiO(2) nanomask by metal-organic chemical vapor deposition (MOCVD) were demonstrated. Microscale air voids and an SiO(2) nanomask were clearly observed at the interface between GaN nanorods (NRs) and the overgrown GaN layer by scanning electron microscopy (SEM). From the reflectance spectra we show strong reflectance differences due to the different refractive index gradient between the GaN grown on the nanotemplate and sapphire. It can increase the light extraction efficiency due to additional light scattering. The transmission electron microscopy (TEM) images show the threading dislocations were suppressed by nanoscale epitaxial lateral overgrowth (NELOG). The LEDs with embedded microscale air voids and an SiO(2) nanomask exhibit smaller reverse-bias current and large enhancement of the light output (65% at 20 mA) compared with conventional LEDs.en_US
dc.language.isoen_USen_US
dc.titleHigh efficiency GaN-based light-emitting diodes with embedded air voids/SiO(2) nanomasksen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/23/4/045303en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume23en_US
dc.citation.issue4en_US
dc.citation.spageen_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
Appears in Collections:Articles