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dc.contributor.authorSun, Yi-Jan Leoen_US
dc.contributor.authorHsieh, Pin-Hsienen_US
dc.contributor.authorLin, Grayen_US
dc.date.accessioned2019-08-02T02:15:31Z-
dc.date.available2019-08-02T02:15:31Z-
dc.date.issued2019-06-01en_US
dc.identifier.urihttp://dx.doi.org/10.3390/app9112246en_US
dc.identifier.urihttp://hdl.handle.net/11536/152206-
dc.description.abstractThe dual-wavelength lasing emissions of digitally chirped multilayer quantum dot (QD) lasers are investigated both experimentally and theoretically. The two lasing wavelengths are both identified as ground-state (GS) emissions but originated from different stacks of QD multilayers. The lasing spectra exhibited broadening and splitting properties by injecting more current. Moreover, the wavelength-resolved light-current characteristics reveal that first GS lasing intensity upon the threshold of second GS transitions neither saturates nor droops with increasing injection current, but increases with slightly reduced slope efficiency. A theoretical model is developed for digitally chirped multilayer QD lasers. The simulation results qualitatively reproduce the experimental observations.en_US
dc.language.isoen_USen_US
dc.subjectquantum dotsen_US
dc.subjectsemiconductor lasersen_US
dc.subjectdual-wavelength lasersen_US
dc.subjectrate equationsen_US
dc.titleDigitally Chirped Multilayer Quantum Dot Lasers with Dual-Wavelength Lasing Emissionsen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/app9112246en_US
dc.identifier.journalAPPLIED SCIENCES-BASELen_US
dc.citation.volume9en_US
dc.citation.issue11en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000472641200074en_US
dc.citation.woscount0en_US
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