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dc.contributor.authorTuan, Pi-Huien_US
dc.contributor.authorHsieh, Yen-Huien_US
dc.contributor.authorTu, Chin-Weien_US
dc.contributor.authorLee, Chi-Chunen_US
dc.contributor.authorTsou, Chia-Hanen_US
dc.contributor.authorLiang, Hsin-Chihen_US
dc.contributor.authorHuang, Kai-Fengen_US
dc.contributor.authorChen, Yung-Fuen_US
dc.date.accessioned2019-08-02T02:15:33Z-
dc.date.available2019-08-02T02:15:33Z-
dc.date.issued2019-11-01en_US
dc.identifier.issn1077-260Xen_US
dc.identifier.urihttp://dx.doi.org/10.1109/JSTQE.2019.2921380en_US
dc.identifier.urihttp://hdl.handle.net/11536/152227-
dc.description.abstractHigh-order pattern formation in an optically pumped semiconductor laser (OPSL) under a selective pumping with varying spatial overlap between the pump beam and transverse modes is explored. In contrast to transverse pattern generation by off-axis pumped solid-state lasers where the mode order can be flexibly increased, experimental results reveal that the selective pumping fails to realize high-order mode operation in OPSLs when the pump-to-mode size ratio and pump power are insufficiently large. On the other hand, several high-order patterns belonging to the Hermite-Laguerre-Gaussian (HLG) modes are observed when scanning a large-ratio pump beam to specific positions on the gain chip. These HLG modes are experimentally confirmed to mainly originate from the transverse non-uniformity of present OPSL chip, while their structural features cannot be simply correlated with the pump scanning positions. Nevertheless, it is believed that the first-time observation of pure HLG modes under the large-ratio pumping can offer useful insights into the high-order pattern manipulation in OPSLs.en_US
dc.language.isoen_USen_US
dc.subjectVertical emitting lasersen_US
dc.subjectsemiconductor lasersen_US
dc.subjectlaser beam characterizationen_US
dc.subjectoptical vorticesen_US
dc.titleGenerating High-Order Transverse Patterns in Optically Pumped Semiconductor Lasersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JSTQE.2019.2921380en_US
dc.identifier.journalIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICSen_US
dc.citation.volume25en_US
dc.citation.issue6en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000473177600001en_US
dc.citation.woscount0en_US
Appears in Collections:Articles