完整後設資料紀錄
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dc.contributor.authorMadhaiyan, Govindasamyen_US
dc.contributor.authorChen, Chao-Hsuanen_US
dc.contributor.authorWu, Yi-Chuen_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorLin, Hong-Cheuen_US
dc.date.accessioned2019-08-02T02:18:26Z-
dc.date.available2019-08-02T02:18:26Z-
dc.date.issued2019-06-07en_US
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c8tc06364hen_US
dc.identifier.urihttp://hdl.handle.net/11536/152280-
dc.description.abstractIn this work, we successfully demonstrated an extremely-low-voltage (0.05 V) gas sensor based on a vertical organic diode with work-function-matched electrodes. With the designed electrodes (MoO3/Al vs. Al), the built-in field in the vertical diode is greatly reduced and hence the diode can be turned on at a very low voltage. By producing nanometer pores in the top electrode, the diode becomes a very sensitive gas sensor to detect ammonia in parts-per-billion (ppb) concentrations. Upon reducing the voltage from 5 V to 0.05 V, this sensor device shows an over 5-times enhancement in the sensitivity. The air-stable sensing film also exhibits a lifetime of 30 days in air. Finally, by connecting with an organic photovoltaic (OPV) device, the gas sensor can be directly powered and switched on by irradiating light on the OPV.en_US
dc.language.isoen_USen_US
dc.titleA 0.05 V driven ammonia gas sensor based on an organic diode with a top porous layered electrode and an air-stable sensing filmen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c8tc06364hen_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Cen_US
dc.citation.volume7en_US
dc.citation.issue21en_US
dc.citation.spage6440en_US
dc.citation.epage6447en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000470700000028en_US
dc.citation.woscount0en_US
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